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| VN0545 VN0550 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS 450V 500V MIL visual screening available RDS(ON) (max) 60 60 ID(ON) (min) 150mA 150mA Order Number / Package TO-92 -- VN0550N3 Die VN0545ND VN0550ND 7 High Reliability Devices See pages 5-4 and 5-5 for MILITARY STANDARD Process Flows and Ordering Information. Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Features s Free from secondary breakdown s Low power drive requirement s Ease of paralleling s Low CISS and fast switching speeds s Excellent thermal stability s Integral Source-Drain diode s High input impedance and high gain s Complementary N- and P-channel devices Package Options Applications s Motor controls s Converters s Amplifiers s Switches s Power supply circuits s Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Absolute Maximum Ratings Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage Operating and Storage Temperature Soldering Temperature* * Distance of 1.6 mm from case for 10 seconds. 7-165 BVDSS BVDGS 20V -55C to +150C 300C SGD TO-92 Note: See Package Outline section for dimensions. VN0545/VN0550 Thermal Characteristics Package TO-92 ID (continuous)* 50mA ID (pulsed) 250mA Power Dissipation @ TC = 25C 1.0W C/W 125 jc C/W 170 ja IDR* 50mA IDRM 250mA * ID (continuous) is limited by max rated Tj. Electrical Characteristics (@ 25C unless otherwise specified) Symbol BVDSS VGS(th) VGS(th) IGSS IDSS Parameter Drain-to-Source Breakdown Voltage Gate Threshold Voltage Change in VGS(th) with Temperature Gate Body Leakage Zero Gate Voltage Drain Current VN0550 VN0545 Min 500 450 2 -3.8 4 -5.0 100 10 1 ID(ON) RDS(ON) RDS(ON) GFS CISS COSS CRSS td(ON) tr td(OFF) tf VSD trr ON-State Drain Current 150 Static Drain-to-Source ON-State Resistance Change in RDS(ON) with Temperature Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Drop Reverse Recovery Time 0.8 300 50 100 350 45 40 1 100 45 8 2 55 10 5 10 15 10 10 V ns VGS = 0V, ISD = 0.5A VGS = 0V, ISD = 0.5A ns VDD = 25V, ID = 150mA, RGEN = 25 pF 60 1.7 %/C m V mV/C nA A mA Typ Max Unit V Conditions VGS = 0V, ID = 1mA VGS = VDS , ID = 1mA VGS = VDS , ID = 1mA VGS = 20V, VDS = 0V VGS = 0V, VDS = Max Rating VGS = 0V, VDS = 0.8 Max Rating TA = 125C VGS = 5V, VDS = 25V VGS = 10V, VDS = 25V VGS = 5V, ID = 50mA VGS = 10V, ID = 50mA VGS = 10V, ID = 50mA VDS = 25V, ID = 50mA VGS = 0V, VDS = 25V f = 1 MHz mA Notes: 1. All D.C. parameters 100% tested at 25C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 10V 90% INPUT 0V 10% t(ON) td(ON) VDD OUTPUT 0V 90% 90% tr t(OFF) td(OFF) tF PULSE GENERATOR Rgen VDD RL OUTPUT D.U.T. 10% 10% INPUT 7-166 VN0545/VN0550 Typical Performance Curves Output Characteristics 0.5 VGS = 10V 0.25 Saturation Characteristics 8V 0.4 0.20 6V VGS = 10V 8V 6V ID (amperes) 0.3 ID (amperes) 0.15 0.2 0.10 0.1 0.05 4V 4V 0 0 10 20 30 40 50 0 0 2 4 6 8 10 7 VDS (volts) Transconductance vs. Drain Current 0.40 10 VDS (volts) Power Dissipation vs. Case Temperature VDS = 25V 0.32 8 GFS (siemens) 0.16 TA = 25C PD (watts) 0.24 TA = -55C 6 4 0.08 TA = 125C 2 TO-92 0 0 0.1 0.2 0.3 0.4 0.5 0 0 25 50 75 100 125 150 ID (amperes) Maximum Rated Safe Operating Area 1.0 1.0 TC (C) Thermal Response Characteristics Thermal Resistance (normalized) 0.8 ID (amperes) 0.1 0.6 TO-92 (DC) 0.4 0.01 0.2 TO-92 PD = 1W TC = 25C TC = 25C 0.001 1 10 100 1000 0 0.001 0.01 0.1 1 10 VDS (volts) tp (seconds) 7-167 VN0545/VN0550 Typical Performance Curves BVDSS Variation with Temperature 100 1.1 80 On-Resistance vs. Drain Current VGS = 5V BVDSS (normalized) RDS(ON) (ohms) 60 VGS = 10V 1.0 40 20 0.9 0 -50 0 50 100 150 0 0.1 0.2 0.3 0.4 0.5 Tj (C) Transfer Characteristics 0.5 ID (amperes) V(th) and RDS Variation with Temperature 1.4 1.8 VDS = 25V 0.4 RDS(ON) @ 10V, 50mA VGS(th) (normalized) 25C 1.2 1.4 0.3 V(th) @ 1mA 1.0 1.0 150C 0.2 0.8 0.6 0.1 0.6 0 0.2 0 2 4 6 8 10 -50 0 50 100 150 VGS (volts) Capacitance vs. Drain-to-Source Voltage 100 10 Tj(C) Gate Drive Dynamic Characteristics VDS = 10V 8 f = 1MHz 75 105 pF C (picofarads) VGS (volts) 6 50 CISS VDS = 40V 4 112 pF 25 2 COSS CRSS 0 0 10 20 30 40 50 pF 0 0 0.2 0.4 0.6 0.8 1.0 VDS (volts) QG (nanocoulombs) 7-168 RDS(ON) (normalized) TA = -55 C ID (amperes) |
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